Atomic, electronic and transport properties of In-Au 2D compound on Si(1 0 0)

Two-dimensional (In, Au)/Si(1 0 0)c(2 [Formula: see text] 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe re...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2020-03, Vol.32 (13), p.135003-135003
Main Authors: Gruznev, D V, Bondarenko, L V, Tupchaya, A Y, Kotlyar, V G, Utas, O A, Mihalyuk, A N, Denisov, N V, Matetskiy, A V, Zotov, A V, Saranin, A A
Format: Article
Language:English
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Summary:Two-dimensional (In, Au)/Si(1 0 0)c(2 [Formula: see text] 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurements assisted with first-principles density-functional-theory calculations. The present results are compared to those obtained earlier for the parent (Tl, Au)/Si(1 0 0)c(2 [Formula: see text] 2) system.
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/ab5f28