Thin film x-ray spectrometry

Proc. Specialist Workshop in Analytical Electron Microscopy, University, Ithaca, N.Y., U.S.A., July 1978. Instrumental parameters affecting the spectrum background intensity in the elemental analysis of thin films with an energy dispersive spectrometer (EDS) in a transmission microscope or scanning...

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Bibliographic Details
Published in:Ultramicroscopy 1978, Vol.3 (4), p.397-400
Main Authors: Geiss, Roy H., Kyser, David F.
Format: Article
Language:English
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Summary:Proc. Specialist Workshop in Analytical Electron Microscopy, University, Ithaca, N.Y., U.S.A., July 1978. Instrumental parameters affecting the spectrum background intensity in the elemental analysis of thin films with an energy dispersive spectrometer (EDS) in a transmission microscope or scanning transmission electron microscope and discussed. The results of Monte Carlo calculations of (i) the beam spread as a function of probe size and accelerating voltage for a 1000 A Cu foil and (ii) the expected spatial resolution of EDS analysis for, inter alia, Al, Au Cu films, 400-4000 A thick, are presented; EDS measurements made at the triple point of a sample of Si3N4 fused with Yt2O3, demonstrating the high spatial resolution capabilities, are also presented. 9 ref.--R.B.
ISSN:0304-3991
1879-2723
DOI:10.1016/S0304-3991(78)80061-8