Monolithic high-power dual-wavelength GaAlAs laser array

Monolithic integration of high-power GaAlAs lasers is demonstrated. The new dual-wavelength laser array is implemented by integrating a twin-ridge substrate laser and a terraced substrate laser by the one-step liquid phase epitaxy technique. Both lasers integrated on a GaAs chip continuously operate...

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Bibliographic Details
Published in:Applied physics letters 1983-11, Vol.43 (10), p.903-905
Main Authors: WADA, M, HAMADA, K, SHIMIZU, H, KUME, M, TAJIRI, F, ITOH, K, KANO, G
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Monolithic integration of high-power GaAlAs lasers is demonstrated. The new dual-wavelength laser array is implemented by integrating a twin-ridge substrate laser and a terraced substrate laser by the one-step liquid phase epitaxy technique. Both lasers integrated on a GaAs chip continuously operated at the power output as high as (30+30) mW in single longitudinal modes with a wavelength separation of 31 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94174