OMVPE Growth of GaAs sub 1--x Sb sub x : Solid Composition

III/V ratio is found to have a major effect on the Sb distribution coefficient for OMVPE growth of GaAs sub 1--x Sb sub x . Experimental results are described well by thermodynamic calculations. For III/V > 1, essentially all arsenic and Sb in the vapor are incorporated into the solid, allowing t...

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Bibliographic Details
Published in:Journal of crystal growth 1983-11, Vol.64 (2), p.413-415
Main Authors: Stringfellow, G B, Cherng, M J
Format: Article
Language:English
Online Access:Get full text
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Summary:III/V ratio is found to have a major effect on the Sb distribution coefficient for OMVPE growth of GaAs sub 1--x Sb sub x . Experimental results are described well by thermodynamic calculations. For III/V > 1, essentially all arsenic and Sb in the vapor are incorporated into the solid, allowing the growth of GaAs sub 0.5 Sb sub 0.5 right in the center of the solid phase miscibility gap at 600 deg C.--AA
ISSN:0022-0248