The influence of surface oxide films on the stabilization of n-Si photoelectrode

We have provided direct evidence of the enhanced effectiveness of stabilizing agents due to thin surface oxide films, ca. 15–25 Å, on n-Si photoelectrode. Rotating ring disc electrode and ellipsometric experiments are combined to show the stabilization efficiency of potassium ferrocyanide improves w...

Full description

Saved in:
Bibliographic Details
Published in:Surface science 1981-08, Vol.109 (1), p.75-81
Main Authors: Loo, B.H., Frese, K.W., Roy Morrison, S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have provided direct evidence of the enhanced effectiveness of stabilizing agents due to thin surface oxide films, ca. 15–25 Å, on n-Si photoelectrode. Rotating ring disc electrode and ellipsometric experiments are combined to show the stabilization efficiency of potassium ferrocyanide improves with oxide thickness. A band model describing the observed effect is given.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(81)90512-4