Investigation of the complex permittivity of n-type silicon at millimeter wavelengths

Measurements of the complex permittivity at 107.3 GHz of n-type silicon specimens in the 5–50 Ω cm resistivity range were made using a free space reflection/transmission technique. Reflectance measurements on specimens in the 0.004–5 Ω cm range were obtained. All measurements were compared with a si...

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Bibliographic Details
Published in:Journal of applied physics 1983-06, Vol.54 (6), p.3394-3398
Main Authors: KINASEWITZ, R. T, SENITZKY, B
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Permittivity (dielectric function)
Physics
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Summary:Measurements of the complex permittivity at 107.3 GHz of n-type silicon specimens in the 5–50 Ω cm resistivity range were made using a free space reflection/transmission technique. Reflectance measurements on specimens in the 0.004–5 Ω cm range were obtained. All measurements were compared with a single relaxation time Drude model and a more complete model that was developed which includes Fermi–Dirac statistics and energy dependent lattice and impurity scattering. Although the Drude model was found to reliably predict the complex permittivity of n-type silicon over a specified range of resistivity, it has limitations which are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.332452