Hexagonal Boron Nitride Synthesized at Atmospheric Pressure Using Metal Alloy Solvents: Evaluation as a Substrate for 2D Materials

Hexagonal boron nitride (h-BN) synthesized under high pressure and high temperature (HPHT) has been used worldwide in two-dimensional (2D) materials research as an essential material for constructing van der Waals heterostructures. Here, we study h-BN synthesized with another method, i.e., via synth...

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Published in:Nano letters 2020-01, Vol.20 (1), p.735-740
Main Authors: Onodera, Momoko, Taniguchi, Takashi, Watanabe, Kenji, Isayama, Miyako, Masubuchi, Satoru, Moriya, Rai, Machida, Tomoki
Format: Article
Language:English
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Summary:Hexagonal boron nitride (h-BN) synthesized under high pressure and high temperature (HPHT) has been used worldwide in two-dimensional (2D) materials research as an essential material for constructing van der Waals heterostructures. Here, we study h-BN synthesized with another method, i.e., via synthesis at atmospheric pressure and high temperature (APHT) using a metal alloy solvent. First, we examine the APHT h-BN in a bulk crystal form using cathodoluminescence and find that it does not have carbon-rich domains that inevitably exist in a core region of all the HPHT h-BN crystals. Next, we statistically compare the size of the crystal flakes exfoliated on a SiO2/Si substrate from APHT and HPHT h-BN crystals by employing our automated 2D material searching system. Finally, we provide direct evidence that APHT h-BN can serve as a high-quality substrate for 2D materials by demonstrating high carrier mobility, ballistic transport, and Hofstadter butterfly in graphene and photoluminescence in WS2.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.9b04641