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Photoconductivity and photovoltaic effect in indium selenide

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different...

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Bibliographic Details
Published in:Journal of applied physics 1983-02, Vol.54 (2), p.876-888
Main Authors: SEGURA, A, GUESDON, J. P, BESSON, J. M, CHEVY, A
Format: Article
Language:English
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Summary:Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p-n junctions, bismuth/p-type InSe, platinum/n-type InSe, and indium tin oxyde (ITO)/p-type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.332050