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Photoconductivity and photovoltaic effect in indium selenide
Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different...
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Published in: | Journal of applied physics 1983-02, Vol.54 (2), p.876-888 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p-n junctions, bismuth/p-type InSe, platinum/n-type InSe, and indium tin oxyde (ITO)/p-type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.332050 |