Evidence for Exponential Band Tails in Amorphous Silicon Hydride

Measurements of the shape of the localized state distribution near the conduction- and valence-band edges in thin films of glow-discharge amorphous silicon hydride, a-SiH(x) are reported. It is noted that the properties of the band-tail states are inferred from time-of-flight measurements of the tem...

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Bibliographic Details
Published in:Physical review letters 1981-01, Vol.46 (21), p.1425-1428
Main Authors: Tiedje, T., Cebulka, J. M., Morel, D. L., Abeles, B.
Format: Article
Language:English
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Summary:Measurements of the shape of the localized state distribution near the conduction- and valence-band edges in thin films of glow-discharge amorphous silicon hydride, a-SiH(x) are reported. It is noted that the properties of the band-tail states are inferred from time-of-flight measurements of the temperature dependence of the electron and hole drift mobilities and the temperature dependence of the dispersion in the mobility, both interpreted in terms of a multiple-trapping model of dispersive transport. The excellent agreement between the model and the experimental data is seen as lending considerable support to multiple trapping as the mechanism of charge transport in a-SiH(x). The transition observed near room temperature in the electron transport from dispersive to nondispersive is interpreted as the temperature at which kT equals the characteristic width of the conduction-band tail.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.46.1425