Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition

High quality single crystal films of Al(x)Ga(1-x)N have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be(+) and N(+) implants i...

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Bibliographic Details
Published in:Applied physics letters 1983-09, Vol.43, p.492-494
Main Authors: Khan, M A, Skogman, R A, Schulze, R G, Gershenzon, M
Format: Article
Language:English
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Summary:High quality single crystal films of Al(x)Ga(1-x)N have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be(+) and N(+) implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.
ISSN:0003-6951