Properties and Ion Implantation of Al sub x Ga sub 1x N Epitaxial Single-Crystal Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

High-quality single-crystal films of Al sub x Ga sub 1x N have been grown on sapphire substrates using low-pressure metalorganic chemical vapor deposition at 915 deg C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be exp + and N...

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Bibliographic Details
Published in:Applied physics letters 1983-09, Vol.43 (5), p.492-494
Main Authors: Khan, M A, Skogman, R A, Schulze, R G, Gershenzon, M
Format: Article
Language:English
Online Access:Get full text
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Summary:High-quality single-crystal films of Al sub x Ga sub 1x N have been grown on sapphire substrates using low-pressure metalorganic chemical vapor deposition at 915 deg C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be exp + and N exp + and optical properties of the layers were measured. Electrical compensation by Be exp + and N exp + implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. Some initial results of a study of GaN growth kinetics are also reported. 8 ref.--AA
ISSN:0003-6951