Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

We report the first epitaxial semiconductor-dielectric-semiconductor (SDS) double heterostructures using the III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1−xF2/InP(001), were grown by molecular beam epitaxy and have lattice mismatches of −6.9% and +2.0%, respectively...

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Bibliographic Details
Published in:Applied physics letters 1983-09, Vol.43 (6), p.569-571
Main Authors: TU, C. W, FORREST, S. R, JOHNSTON, W. D. JR
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We report the first epitaxial semiconductor-dielectric-semiconductor (SDS) double heterostructures using the III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1−xF2/InP(001), were grown by molecular beam epitaxy and have lattice mismatches of −6.9% and +2.0%, respectively. In situ high-energy electron diffraction showed that the initial stage of epitaxy of the InP/fluoride structure, unlike that of the fluoride/InP structure, exhibits pseudomorphism. Analysis of the electrical properties of SDS devices with an insulator thickness of ∼100 Å indicates both Ohmic and trap-assisted tunneling conduction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94428