Buried channel MOSFET's with gate lengths from 2.5 mu m to 700 (angstrom)

High resolution electron beam lithography has been used to fabricate ion implanted buried channel MOSFET's with gate lengths ranging from 0.4 mu m to 700 angstrom. Similar devices were also fabricated on the same chip using optical lithography with gate lengths of 2.5 mu m. These devices includ...

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Bibliographic Details
Published in:IEEE electron device letters 1982-01, Vol.EDL-3 (10), p.322-324
Main Authors: Howard, R E, Jackel, L D, Swartz, R G, Grabbe, P, Archer, V D, Epworth, R W, Hu, E L, Tennant, D M, Voshchenkov, A M
Format: Article
Language:English
Online Access:Get full text
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Summary:High resolution electron beam lithography has been used to fabricate ion implanted buried channel MOSFET's with gate lengths ranging from 0.4 mu m to 700 angstrom. Similar devices were also fabricated on the same chip using optical lithography with gate lengths of 2.5 mu m. These devices include some with the smallest lithographically defined gates ever made in silicon; similar devices should help define the limits to miniaturization in semiconducting devices.
ISSN:0741-3106
DOI:10.1109/EDL.1982.25585