Characterization of Amorphous Si: H Films Prepared by rf Planar Magnetron Sputtering

Hydrogenated amorphous silicon films were prepared by rf planar magnetron reactive sputtering. We describe the influence of the preparation parameters on the physical properties and on the hydrogen content in the films. The hydrogen content C H and the ratio of C SiH to C SiH 2 are major factors gov...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1982-01, Vol.21 (S2), p.209-212
Main Authors: Nagatomo, Takao, Moribe, Shunji, Usui, Masaaki, Omoto, Osamu
Format: Article
Language:English
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Summary:Hydrogenated amorphous silicon films were prepared by rf planar magnetron reactive sputtering. We describe the influence of the preparation parameters on the physical properties and on the hydrogen content in the films. The hydrogen content C H and the ratio of C SiH to C SiH 2 are major factors governing the film properties. The a-Si: H films with the high resistivity (7.2×10 10 ∼1.2×10 11 Ω·cm) and the high ratio of photo-conductivity to dark-conductivity (σ ph /σ d ∼1.4×10 4 ) were obtained at the deposition pressure of 3×10 -4 Torr and the substrate temperature of 250°C.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.21S2.209