Effects of water vapor anneal on MIS devices made of nitrided gate dielectrics

Silicon nitride and oxynitride films possess a number of attractive properties over thermal SiO sub(2) as gate dielectric for Field-Effect Transistors (FET's). However, these films exhibit poor interface properties that prevent their use as a mainstream gate dielectric. Fortunately, a modest an...

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Bibliographic Details
Main Authors: Wang, Xiewen, Khare, Mukesh, Ma, T P
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Silicon nitride and oxynitride films possess a number of attractive properties over thermal SiO sub(2) as gate dielectric for Field-Effect Transistors (FET's). However, these films exhibit poor interface properties that prevent their use as a mainstream gate dielectric. Fortunately, a modest annealing treatment in a steam furnace can already be used to yield dramatic improvement of FET's transductance and current driveability, while preserving excellent reliability.
ISSN:0743-1562