Conductivity Control and Photovoltaic Effects in Chalcogenide Amorphous Semiconductor

We found that several metals with strong ionization tendency such as Mg, Al and Zn formed rectifying contacts with amorphous chalcogenide films. The rectifying effects are ascribed to a high-resistivity layer in contact region between such metals and chalcogenide films, which is considered to be for...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1982-01, Vol.21 (S2), p.185-189
Main Authors: Okano, Shuichi, Kawachi, Ryuichi, Yamazaki, Ryoichi, Kakimoto, Yoshio, Suzuki, Masakuni
Format: Article
Language:English
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Summary:We found that several metals with strong ionization tendency such as Mg, Al and Zn formed rectifying contacts with amorphous chalcogenide films. The rectifying effects are ascribed to a high-resistivity layer in contact region between such metals and chalcogenide films, which is considered to be formed by the diffusion of small amount of metal ions. We also found that the considerable amount of Cu and Cd diffused into amorphous chalcogenide films below the glass transition temperature in the dark so that conductivity of amorphous chalcogenide films increased drastically. In these phenomena, chemical reactions at the interface are considered to play important roles in the diffusion of metal ions into amorphous chalcogenide films. Metal doping assisted by chemical reaction would be useful and important for the application of amorphous chalcogenide semiconductors to photovoltaic devices.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.21S2.185