Deep photoluminescence band related to oxygen in gallium arsenide

Temperature-dependent photoluminescence and photoluminescence excitation spectroscopy have been used to measure the 0.63-eV luminescence band present in O-doped semi-insulating GaAs. It is shown that the 0.63-eV band is related to the presence of O. The center responsible for the band forms a deep l...

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Bibliographic Details
Published in:Applied physics letters 1982-11, Vol.41 (9), p.863-865
Main Authors: Yu, P W, Walters, D C
Format: Article
Language:English
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Summary:Temperature-dependent photoluminescence and photoluminescence excitation spectroscopy have been used to measure the 0.63-eV luminescence band present in O-doped semi-insulating GaAs. It is shown that the 0.63-eV band is related to the presence of O. The center responsible for the band forms a deep level similar to the main deep donor EL2. However, spark source mass spectrometry indicates that incorporation of O into GaAs is difficult.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93678