A defect etchant for single crystal GaSb

A new defect etchant for GaSb is described. Concentrated HCl and H sub 2 O sub 2 in the volume ratio 2:1 is shown to give good results. Reproducible results are given for {100} and {111} Sb surfaces with suitable surface pretreatment and constant agitation to remove gaseous products. Etching on the...

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Bibliographic Details
Published in:Journal of materials science letters 1982-06, Vol.1 (6), p.253-256
Main Authors: Brown, G. T., Cockayne, B., MacEwan, W. R., Steward, V. W.
Format: Article
Language:English
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Summary:A new defect etchant for GaSb is described. Concentrated HCl and H sub 2 O sub 2 in the volume ratio 2:1 is shown to give good results. Reproducible results are given for {100} and {111} Sb surfaces with suitable surface pretreatment and constant agitation to remove gaseous products. Etching on the {111} Ga was not possible and results for the {110} surfaces were not as reproducible. Growth striations in both doped and undoped crystals are also readily revealed by this etchant.--M.G.S.
ISSN:0261-8028
1573-4811
DOI:10.1007/BF00727849