Forming ohmic contacts in CdSe thin-film transistors by dc sputter etching

dc sputter etching is used in the photolithographic fabrication of CdSe thin-film transistors to clean the interfaces between Cr or Cr-Au source-drain contacts and CdSe. To evaluate the effects, the devices are tested by both I-V characteristics and transient-reponse-charge injection measurements. T...

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Bibliographic Details
Published in:Applied physics letters 1982-01, Vol.41 (6), p.552-554
Main Authors: Luo, F. C., Freeman, E. C., Slowik, J. H., Poleshuk, M.
Format: Article
Language:English
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Summary:dc sputter etching is used in the photolithographic fabrication of CdSe thin-film transistors to clean the interfaces between Cr or Cr-Au source-drain contacts and CdSe. To evaluate the effects, the devices are tested by both I-V characteristics and transient-reponse-charge injection measurements. The results indicate that dc sputter etching improves the contacts significantly. The charge injection of cleaned contacts approaches the theoretical maximum (ohmic) value.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93593