Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier

The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/ GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-out...

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Bibliographic Details
Published in:Journal of electronic materials 1996-12, Vol.25 (12), p.1818-1822
Main Authors: CHAI, C.-Y, HUANG, J.-A, LAI, Y.-L, WU, J.-W, CHANG, C.-Y, CHAN, Y.-J, CHENG, H.-C
Format: Article
Language:English
Subjects:
Applied sciences
Chemical bonds
Diffusion
Electronics
Exact sciences and technology
Metals
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silver
Temperature
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Summary:The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/ GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02657159