Deep level transient spectroscopy for diodes with large leakage currents

A Deep Level Transient Spectroscopy (DLTS) system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge employing the diode to be tested along with a dummy diode of similar characteristics is used. The DLTS spectrum of a leaky GaAs planar diode is m...

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Published in:Review of scientific instruments 1979-12, Vol.50 (12), p.1571-1573
Main Authors: Day, D. S., Helix, M. J., Hess, K., Streetman, B. G.
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Language:English
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creator Day, D. S.
Helix, M. J.
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description A Deep Level Transient Spectroscopy (DLTS) system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge employing the diode to be tested along with a dummy diode of similar characteristics is used. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems. It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77° and 300° K.
doi_str_mv 10.1063/1.1135761
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source AIP_美国物理联合会现刊（与NSTL共建）; AIP_美国物理联合会期刊回溯（NSTL购买）
title Deep level transient spectroscopy for diodes with large leakage currents
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