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Deposition of tungsten-alumina composite films by oxide evaporation
Tungsten-alumina composite films were deposited by the co-evaporation of tungsten trioxide and aluminum from separate sources, followed by the condensation and reaction of the vapours on heated substrates of molybdenum, titanium and alumina. Growth rates between 0.2 and 0.5 μm min -1 were obtained a...
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Published in: | Thin solid films 1979-11, Vol.63 (2), p.377-382 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Tungsten-alumina composite films were deposited by the co-evaporation of tungsten trioxide and aluminum from separate sources, followed by the condensation and reaction of the vapours on heated substrates of molybdenum, titanium and alumina. Growth rates between 0.2 and 0.5 μm min
-1 were obtained at substrate temperatures of about 1000 °C. The deposits were shown to have good oxidation resistance, high microhardness and remarkably increased electrical resistance compared with the pure metal films. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(79)90043-9 |