Microtwinning and growth defects in GaAs MBE layers

The most common macroscopic defects in (100) GaAs layers grown by molecular beam epitaxy (MBE) are elongated hillocks which are 〈110〉 oriented, also called “oval defects”. The crystals defects associated with these defects were studied using selective chemical etching and transmission electron micro...

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Bibliographic Details
Published in:Journal of crystal growth 1982-10, Vol.59 (3), p.531-538
Main Authors: Bafleur, M., Munoz-Yague, A., Rocher, A.
Format: Article
Language:English
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Summary:The most common macroscopic defects in (100) GaAs layers grown by molecular beam epitaxy (MBE) are elongated hillocks which are 〈110〉 oriented, also called “oval defects”. The crystals defects associated with these defects were studied using selective chemical etching and transmission electron microscopy. This study shows that in the region of the morphological defect, two limiting cases exist: (i) there are no noticeable crystal defects, (ii) a perturbed crystal including dislocations, stacking faults and twins, is clearly observed. It is also shown that substrate preparation, namely carbon contamination plays an important role in the formation of a large number of such defects.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(82)90374-8