Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond Resolution

Time-resolved measurements of optically induced changes in the near-band-gap transmission spectrum of GaAs at 80 deg K, following with an ultrashort laser pulse, provide a means of directly monitoring the hot carrier distribution as it cools to the lattice temp. with a time constant of 4 ps. Exciton...

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Bibliographic Details
Published in:Physical review letters 1979-01, Vol.42 (2), p.112-115
Main Authors: Shank, C. V., Fork, R. L., Leheny, R. F., Shah, Jagdeep
Format: Article
Language:English
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Summary:Time-resolved measurements of optically induced changes in the near-band-gap transmission spectrum of GaAs at 80 deg K, following with an ultrashort laser pulse, provide a means of directly monitoring the hot carrier distribution as it cools to the lattice temp. with a time constant of 4 ps. Exciton screening and band-gap renormalization are observed to occur in < 0.5 ps.11 refs.--AA
ISSN:0031-9007
DOI:10.1103/PhysRevLett.42.112