Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Amorphous SiO -Nb O nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC H ) , Si (NHC H ) , and O to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the comp...

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Bibliographic Details
Published in:Nanotechnology 2020-05, Vol.31 (19), p.195713-195713
Main Authors: Kukli, Kaupo, Kemell, Marianna, Heikkilä, Mikko J, Castán, Helena, Dueñas, Salvador, Mizohata, Kenichiro, Ritala, Mikko, Leskelä, Markku
Format: Article
Language:English
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Summary:Amorphous SiO -Nb O nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC H ) , Si (NHC H ) , and O to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO :Nb O mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ab6fd6