Effects of an n-layer under the gate on the performance of InP MESFET's

The microwave and dc performance of Schottky barrier InP FET's where an n - layer of low carrier concentration is incorporated between the gate metal and the active layer are reported. FET's having gate dimensions of 1 µm × 200 µm and a channel length of 7 µm were fabricated. The observed...

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Published in:IEEE transactions on electron devices 1979-03, Vol.26 (3), p.238-241
Main Authors: Morkoc, H., Andrews, J.T., Hyder, S.B.
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Language:English
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creator Morkoc, H.
Andrews, J.T.
Hyder, S.B.
description The microwave and dc performance of Schottky barrier InP FET's where an n - layer of low carrier concentration is incorporated between the gate metal and the active layer are reported. FET's having gate dimensions of 1 µm × 200 µm and a channel length of 7 µm were fabricated. The observed gate leakage current was about 1 µA at a reverse bias of -12 V. The voltage that can be applied to the drain before breakdown was about +20 V while the gate bias was kept at -5 V. A maximum available gain of 6 dB in a microstrip circuit was measured at 9 GHz.
doi_str_mv 10.1109/T-ED.1979.19414
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title Effects of an n-layer under the gate on the performance of InP MESFET's
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