Laser-irradiation effects on unencapsulated GaAs studied by capacitance spectroscopy

The effect of Q-switched ruby-laser irradiation on unencapsulated unimplanted bulk GaAs has been investigated by means of deep-level transient spectroscopy (DLTS) and C-V carrier profiling. It was found that the concentration of a deep-level center (Ec−0.83 eV) assigned to the A center decreases con...

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Bibliographic Details
Published in:Applied physics letters 1979-07, Vol.35 (2), p.156-158
Main Authors: Yuba, Yoshihiko, Gamo, Kenji, Murakami, Kouichi, Namba, Susumu
Format: Article
Language:English
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Summary:The effect of Q-switched ruby-laser irradiation on unencapsulated unimplanted bulk GaAs has been investigated by means of deep-level transient spectroscopy (DLTS) and C-V carrier profiling. It was found that the concentration of a deep-level center (Ec−0.83 eV) assigned to the A center decreases considerably as a result of laser irradiation, and that no deep levels (electron traps) more than 3×1013/cm3 are induced by the laser irradiation on the uncapped surface at a power level suitable for the recrystallization of an amorphous layer produced by ion implantation. No significant change in the free-carrier profile at a depth deeper than 1500 Å from the surface was observed after the laser irradiation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91041