Electron Spectroscopy for Chemical Analysis Spectrum of R.F. Sputtered GaAs

• Published in: Thin solid films 1979-08, Vol.61 (3), p.L23-L25
• Main Authors: McEvoy, A J, Wrixon, G T, Parkes, A, Montgomery, V
• Format: Article
• Language: English
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(79)90490-5

A letter. Electron spectroscopy for chemical analysis (ESCA) studies were performed on r.f. sputtered GaAs films grown on single-crystal GaAs to determine their suitability as photovoltaic materials. The films were found to be composed of GaAs lightly coated with a As(111) oxide due to environmental exposure after deposition. Observed spectra were comparable with those of GaAs films grown by the organometallic process. When Ge-coated W foil was used as the substrate there was a large but not unprecedented displacement of the ESCA spectrum. Uniform and continuous coverage of the substrate by the sputtered film was verified. Films were adherent, specularly reflective, and metallic in appearance. Nucleation and growth was as 1 mu m granules. It was concluded that there was a high degree of disorder from the absence of a sharp optical absorption edge, haloed lines in the X-ray diffraction pattern, and high electrical resistivity. Two methods were proposed for producing regularly structured GaAs films: electron beam or laser annealing of films r.f. sputtered in Ar and reactive sputtering of Ga in AsH3. 12 ref.--E.J.S.