Large binding due to dispersive screening and bloch function interference in many-valley semiconductors

We derive here a generalization of the effective mass equation which includes the intervalley mixing for many-valley semiconductors. This equation is numerically solved with a model impurity potential for donors in silicon. The results show an extreme sensitivity to the short-range impurity potentia...

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Bibliographic Details
Published in:Solid state communications 1979, Vol.29 (3), p.275-277
Main Authors: Resca, L., Resta, R.
Format: Article
Language:English
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Summary:We derive here a generalization of the effective mass equation which includes the intervalley mixing for many-valley semiconductors. This equation is numerically solved with a model impurity potential for donors in silicon. The results show an extreme sensitivity to the short-range impurity potential and a shallow-deep instability. The combined effect of dispersive screening and many-valley interference gives a deep ground state. This seem to be in agreement with the experimental situation for hydrogen and muonium impurities, to which the chosen model potential applies.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(79)91055-X