Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon

The formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700 °C, proton-beam energies of 50–140 keV, proton-beam current densities of ∼1 μA/cm2, and proton-bombardment times of 3...

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Bibliographic Details
Published in:Journal of applied physics 1979-02, Vol.50 (2), p.777-782
Main Authors: Akutagawa, W., Dunlap, H.L., Hart, R., Marsh, O. J.
Format: Article
Language:English
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Summary:The formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700 °C, proton-beam energies of 50–140 keV, proton-beam current densities of ∼1 μA/cm2, and proton-bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky-barrier differential C-V techniques.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.326044