A New Method for Growing Crystals of SiB sub 2.8-4 Type Silicon Boride From a Metallic Melt

Crystals of "SiB sub 2.8-4 " silicon boride have been grown in a Cu melt, starting from boron and Si powders. The crystals have been isolated and characterized by their diffraction pattern and infrared absorption spectra. 23 ref.--AA

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Bibliographic Details
Published in:Materials research bulletin 1982-11, Vol.17 (11), p.1353-1358
Main Authors: Bouchacourt, M, Thevenot, F
Format: Article
Language:English
Online Access:Get full text
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Summary:Crystals of "SiB sub 2.8-4 " silicon boride have been grown in a Cu melt, starting from boron and Si powders. The crystals have been isolated and characterized by their diffraction pattern and infrared absorption spectra. 23 ref.--AA
ISSN:0025-5408