Picosecond laser pulse irradiation of crystalline silicon

Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. Fr...

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Bibliographic Details
Published in:Applied physics letters 1982-04, Vol.40 (8), p.729-731
Main Authors: Merkle, K. L., Baumgart, H., Uebbing, R. H., Phillipp, F.
Format: Article
Language:English
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Summary:Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93207