Interface chemistry of metal-GaAs Schottky-barrier contacts

A survey of the metal-semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x-ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt int...

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Bibliographic Details
Published in:Applied physics letters 1979-05, Vol.34 (10), p.630-632
Main Authors: Waldrop, J R, Grant, R W
Format: Article
Language:English
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Summary:A survey of the metal-semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x-ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.90642