Bulk traps in silicon-on-sapphire by conductance DLTS

A new deep-level transient spectroscopy (DLTS) technique has been developed for the characterization of deep-level imperfection centers in silicon-on-sapphire (SOS) epitaxial layers, and is based on the use of conductance transients on MOSFET's. Both the distribution of trap levels with energy...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1981-03, Vol.28 (3), p.299-304
Main Authors: Jun-Wei Chen, Ko, R.J., Brzezinski, D.W., Forbes, L., Dell'oca, C.J.
Format: Article
Language:English
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Summary:A new deep-level transient spectroscopy (DLTS) technique has been developed for the characterization of deep-level imperfection centers in silicon-on-sapphire (SOS) epitaxial layers, and is based on the use of conductance transients on MOSFET's. Both the distribution of trap levels with energy in the bandgap of silicon and the spatial distribution of levels in the epitaxial film have been obtained. This complete characterization of trapping levels allows process techniques to be developed to control and reduce their concentrations to acceptable levels in SOS technology.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1981.20332