Reduction of fast surface states on p -type GaAs

Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densiti...

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Bibliographic Details
Published in:Applied physics letters 1982-01, Vol.40 (8), p.700-703
Main Authors: Ahrenkiel, R. K., Wagner, R. S., Pattillo, S., Dunlavy, D., Jervis, T., Kazmerski, L. L., Ireland, P. J.
Format: Article
Language:English
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Summary:Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93240