Reduction of fast surface states on p -type GaAs

Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densiti...

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Published in:Applied physics letters 1982-01, Vol.40 (8), p.700-703
Main Authors: Ahrenkiel, R. K., Wagner, R. S., Pattillo, S., Dunlavy, D., Jervis, T., Kazmerski, L. L., Ireland, P. J.
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description Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.
doi_str_mv 10.1063/1.93240
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title Reduction of fast surface states on p -type GaAs
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