Optically induced gap in the atomic tunneling spectrum of As sub(2)S sub(3) glass

Irradiation of the amorphous semiconductor As sub(2)S sub(3) band-edge photons opens a metastable gap in the low-energy density of states of atomic tunneling systems. Electric resonance studies at temperatures below 1 K indicate the annihilation of similar to 10 super(16) cm super(-3) tunneling cent...

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Bibliographic Details
Published in:Physical review letters 1982-01, Vol.49 (18), p.1356-1360
Main Authors: Fox, D L, Golding, B, Haemmerle, W H
Format: Article
Language:English
Online Access:Get full text
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Summary:Irradiation of the amorphous semiconductor As sub(2)S sub(3) band-edge photons opens a metastable gap in the low-energy density of states of atomic tunneling systems. Electric resonance studies at temperatures below 1 K indicate the annihilation of similar to 10 super(16) cm super(-3) tunneling centers, close to the density of metastable paramagnetic electronic defects created by low-level optical excitation. These findings link low-energy atomic tunneling systems to localized midgap electronic states.
ISSN:0031-9007