Radiative and nonradiative recombination times in semiconducting films

The radiation emitted spontaneously by a semiconductor which has been excited for a very short time decays exponentially with a time constant that depends on the recombination rate of electrons and holes. This recombination rate is the combination of radiative and nonradiative transition rates betwe...

Full description

Saved in:
Bibliographic Details
Published in:Optical and quantum electronics 1982-07, Vol.14 (4), p.331-338
Main Authors: Pacheco, M. T., Ghizoni, C. C.
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The radiation emitted spontaneously by a semiconductor which has been excited for a very short time decays exponentially with a time constant that depends on the recombination rate of electrons and holes. This recombination rate is the combination of radiative and nonradiative transition rates between conduction and valence bands of the semiconductor. The radiative recombination rate depends on the density of states of the electromagnetic field, which can be made to be dependent on the geometry. In this paper, we report on the dependence of the fluorescence lifetime upon the thickness of active thin films. For systems in which the radiative recombination rate is dominant over the nonradiative ones, the total recombination time can be changed by suitable modifications of the thickness of the film. In this situation, the nonradiative rate can be evaluated. We present experimental results for the case of cadmium sulphide (CdS) thin films.
ISSN:0306-8919
1572-817X
DOI:10.1007/BF00619745