Separation of the electron localization and interaction in bismuth film resistance

The temperature dependence of the correction to electrical conductivity, Δσ, of Bi thin films (∼100–200 Å thick) is measured in the region of the electron localization and interaction effects. The measurements are made without magnetic field and with magnetic fields both perpendicular and parallel t...

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Bibliographic Details
Published in:Solid state communications 1982-11, Vol.44 (6), p.865-867
Main Authors: Kommik, Yu.F., Bukhshtab, E.I., Butenko, A.V., Andrievsky, V.V.
Format: Article
Language:English
Subjects:
Analysing. Testing. Standards
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Cross-disciplinary physics: materials science
rheology
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Materials science
Measurement of properties and materials state
Metals, semimetals and alloys
Metals. Metallurgy
Nondestructive testing
Physics
Specific materials
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Summary:The temperature dependence of the correction to electrical conductivity, Δσ, of Bi thin films (∼100–200 Å thick) is measured in the region of the electron localization and interaction effects. The measurements are made without magnetic field and with magnetic fields both perpendicular and parallel to the film surface. Without magnetic field the dependence Δσ(In T) is determined by the total contribution from both effects. As the magnetic field increases, the localization contribution to Δσ decreases and at certain field values it is essentially absent so that the character of Δσ(In T) dependence is determined only by the interaction effect.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(82)90292-7