Separation of the electron localization and interaction in bismuth film resistance

• Published in: Solid state communications 1982-11, Vol.44 (6), p.865-867
• Main Authors: Kommik, Yu.F., Bukhshtab, E.I., Butenko, A.V., Andrievsky, V.V.
• Format: Article
• Language: English
• Subjects: Analysing. Testing. Standards; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Cross-disciplinary physics: materials science; rheology; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Materials science; Measurement of properties and materials state; Metals, semimetals and alloys; Metals. Metallurgy; Nondestructive testing; Physics; Specific materials
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(82)90292-7

The temperature dependence of the correction to electrical conductivity, Δσ, of Bi thin films (∼100–200 Å thick) is measured in the region of the electron localization and interaction effects. The measurements are made without magnetic field and with magnetic fields both perpendicular and parallel to the film surface. Without magnetic field the dependence Δσ(In T) is determined by the total contribution from both effects. As the magnetic field increases, the localization contribution to Δσ decreases and at certain field values it is essentially absent so that the character of Δσ(In T) dependence is determined only by the interaction effect.