Stoichiometry and atomic defects in rf-sputtered SiO sub 2

Electron microprobe and He ion backscattering are used to measure the stoichiometry of rf-sputtered SiO sub 2 films at a precision of greater than 1%. Both O-excess and O-deficient films occur. Optical absorption and ESR characterize atomic defects in the films. The correlation between stoichiometry...

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Bibliographic Details
Published in:Journal of applied physics 1979-01, Vol.50 (1), p.317-323
Main Authors: Hickmott, T W, Baglin, J E
Format: Article
Language:English
Online Access:Get full text
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Summary:Electron microprobe and He ion backscattering are used to measure the stoichiometry of rf-sputtered SiO sub 2 films at a precision of greater than 1%. Both O-excess and O-deficient films occur. Optical absorption and ESR characterize atomic defects in the films. The correlation between stoichiometry and atomic defects is poor. Reproducibility of composition and atomic defects from run to run, when sputtering conditions are held constant, is good. 29 refs.
ISSN:0021-8979