The effect of electron irradiation on the In- X acceptor in In-doped silicon

We present the results of low-temperature Hall measurements on 1-MeV-electron-irradiated In-doped Si. It is observed that the concentrations of the acceptor In-X, Nx, and the compensating donor ND increase immediately after irradiation with fluences ranging from 2×1015 to 1016 e/cm2. It is suggested...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1979-07, Vol.35 (2), p.184-187
Main Authors: Swaminathan, V., Lang, J. E., Hemenger, P. M., Smith, S. R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present the results of low-temperature Hall measurements on 1-MeV-electron-irradiated In-doped Si. It is observed that the concentrations of the acceptor In-X, Nx, and the compensating donor ND increase immediately after irradiation with fluences ranging from 2×1015 to 1016 e/cm2. It is suggested that ND increases after irradiation due to the creation of divacancies, interstitial indium, and interstitial indium–substitutional indium pairs, where the interstitial indium atoms occupy the tetrahedral site. To explain the increase in Nx we propose three possible models for In-X in terms of indium-vacancy pairs, indium interstitials in the split configuration, or indium interstitials in the bond-centered configuration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91030