The interfacial layer in MIS amorphous silicon solar cells

When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change...

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Bibliographic Details
Published in:Journal of applied physics 1979-01, Vol.50 (1), p.548-550
Main Authors: McGill, J, Wilson, J I B, Kinmond, S
Format: Article
Language:English
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Summary:When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space-charge region.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.325651