Temperature dependence of photovoltaic solar energy conversion for GaAs homojunction solar cell

Calculations are reported for the efficiency of GaAs (p on n) homojunction solar cells in the temperature range 100-675 K for the entire solar spectrum. Calculations are based on available data for band structure effective mass and mobility for n-type and p-type GaAs. It is found that the results ar...

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Bibliographic Details
Published in:Solid-state electronics 1979, Vol.22 (1), p.111-112
Main Authors: Mathur, P.C., Kataria, N.D., Arora, J.D.
Format: Article
Language:English
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Summary:Calculations are reported for the efficiency of GaAs (p on n) homojunction solar cells in the temperature range 100-675 K for the entire solar spectrum. Calculations are based on available data for band structure effective mass and mobility for n-type and p-type GaAs. It is found that the results are very sensitive to the band parameters and their temperature variation, due to the fact that the dark current density, to which efficiency is extremely sensitive, is quite small in GaAs.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(79)90180-1