Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs/AlGaAs quantum wells under hydrostatic pressure

Silicon modulation delta -doped GaAs/AlGaAs quantum wells were investigated by Hall effect and Shubnikov de Haas measurements. The two-dimensional carrier concentration n sub(s) was either changed with applied gate voltage or by application of hydrostatic pressure. Due to cooling under different gat...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1996-01, Vol.40 (1-8), p.105-108
Main Authors: Brunthaler, G, Penn, C, Suski, T, Wisniewski, P, Litwin-Staszewska, E, Kohler, K
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon modulation delta -doped GaAs/AlGaAs quantum wells were investigated by Hall effect and Shubnikov de Haas measurements. The two-dimensional carrier concentration n sub(s) was either changed with applied gate voltage or by application of hydrostatic pressure. Due to cooling under different gate voltages or hydrostatic pressures, the correlation between the charged donors could be changed and investigated by evaluation of the transport mobility mu sub(t) and quantum mobility mu sub(q). At the occupation of the second subband, the two mobilities mu sub(t) and mu sub(q) behave qualitatively different. The experimental results are compared with calculations of the scattering times and show the influence of correlation effects on mobility.
ISSN:0038-1101
DOI:10.1016/0038-1101(95)00226-X