Band-to-band luminescence in amorphous silicon

We report the observation of band-to-band luminescence in hydrogenated amorphous Si and present results on the variation of the spectral shape and intensity of this luminescence on excitation photon energy and temperature. The results are very similar to those reported earlier for chalcogenide glass...

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Bibliographic Details
Published in:Solid state communications 1980-10, Vol.36 (3), p.195-197
Main Authors: Shah, Jagdeep, Alexander, F.B., Bagley, B.G.
Format: Article
Language:English
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Summary:We report the observation of band-to-band luminescence in hydrogenated amorphous Si and present results on the variation of the spectral shape and intensity of this luminescence on excitation photon energy and temperature. The results are very similar to those reported earlier for chalcogenide glasses, showing that the electronic states in the bands are similar in these two classes of amorphous solids. A new result is that the spectral shape in a-Si(H) is only slightly affected when the excitation density is increased from less than 10 6 W/cm 3 to ≈ 3×10 11 W/cm 3.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(80)90259-8