A comparison of measurement techniques for determining phosphorus densities in semiconductor silicon

Phosphorus densities in semiconductor Si slices cut from 14 single-crystal ingots have been determined by two electrical and two analytical techniques. Hall effect measurements were made on specimens from all ingots and junction capacitance--voltage measurements were made on specimens with densities...

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Bibliographic Details
Published in:Journal of electronic materials 1980-05, Vol.9 (3), p.551-560
Main Author: Thurber, W. Robert
Format: Article
Language:English
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Summary:Phosphorus densities in semiconductor Si slices cut from 14 single-crystal ingots have been determined by two electrical and two analytical techniques. Hall effect measurements were made on specimens from all ingots and junction capacitance--voltage measurements were made on specimens with densities up to approx 5 x 1017 cm--3. Neutron activation analysis was used to measure P densities from 5 x 1015 to 5 x 1019 cm--3 and a photometric technique was used for densities > 1017 cm--3. A systematic discrepancy of approx 15% between the photometric and neutron activation data is indicative of the interlaboratory agreement that might be realized in practice with these techniques.18 refs.--AA
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02652935