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Elimination of thickness dependence from medium resolution electron holograms
We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering....
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Published in: | Ultramicroscopy 1994-03, Vol.53 (3), p.291-296 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to
CoSi
2/
Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences. |
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ISSN: | 0304-3991 1879-2723 |
DOI: | 10.1016/0304-3991(94)90041-8 |