Defect characterization at the growth interface in GaAs epitaxy by metallorganic and chloride depositions

Sensitive techniques of deep level transient spectroscopy (DLTS) and of optical DLTS were used to study the defects which act as deep levels at the epitaxial interfaces of GaAs layers obtained by the metal--alkyl-hydride and by the AsCl3/H2 processes. From a complete characterization of the observed...

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Bibliographic Details
Published in:Journal of electronic materials 1980-03, Vol.9 (2), p.213-229
Main Authors: Mitonneau, A., Chané, J. P., André, J. P.
Format: Article
Language:English
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Summary:Sensitive techniques of deep level transient spectroscopy (DLTS) and of optical DLTS were used to study the defects which act as deep levels at the epitaxial interfaces of GaAs layers obtained by the metal--alkyl-hydride and by the AsCl3/H2 processes. From a complete characterization of the observed levels, two classes of defects were separated: those due to diffusion from the substrate, where they are present in large concentration (e.g. Cr and EL2, the main defect of bulk or VPE GaAs) and those due to the nonequilibrium problems arising at the beginning of the growth. Their concentration peaks at the interface where a dip is observed in the doping profile. They are related to the starting growth conditions which differ between the different growth methods.18 refs.--AA
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02670847