Creep deformation of V3Si single crystals

From the experiments during steady state creep of V3Si single crystals at T equals 1280 to 1400 C and sigma equals 1 to 7 times 10 to the 7th Pa, activation volumes, 10 to 70 b cubed, and activation enthalpies, 2 to 11 eV, have been derived. With deviation from stoichiometric composition a hardening...

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Bibliographic Details
Published in:Journal of materials science 1980-05, Vol.15 (5), p.1140-1146
Main Authors: Nghiep, D. M., Paufler, P., Kr mer, U., Kleinst ck, K., Quyen, N. H.
Format: Article
Language:English
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Summary:From the experiments during steady state creep of V3Si single crystals at T equals 1280 to 1400 C and sigma equals 1 to 7 times 10 to the 7th Pa, activation volumes, 10 to 70 b cubed, and activation enthalpies, 2 to 11 eV, have been derived. With deviation from stoichiometric composition a hardening effect has been experimentally established. It is suggested that the rate-controlling process was due to dislocation glide and dynamic recovery by dislocation climb.
ISSN:0022-2461
1573-4803
DOI:10.1007/BF00551802